N-Channel MOSFET
MOSFET – N-Channel, POWERTRENCH)
150 V, 79 A, 16 mW
FDB2532-F085
Features
• RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 ...
Description
MOSFET – N-Channel, POWERTRENCH)
150 V, 79 A, 16 mW
FDB2532-F085
Features
RDS(ON) = 14 mW (Typ.), VGS = 10 V, ID = 33 A Qg (tot) = 82 nC (Typ.), VGS = 10 V Low Miller Charge Low QRR Body Diode UIS Capability (Single Pulse and Repetitive Pulse) AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant
Applications
DC/DC converters and Off−Line UPS Distributed Power Architectures and VRMs Primary Switch for 24 V and 48 V Systems High Voltage Synchronous Rectifier Direct Injection / Diesel Injection Systems 42 V Automotive Load Control Electronic Valve Train Systems Synchronous Rectification
DATA SHEET www.onsemi.com
D
G S
DRAIN (FLANGE)
GATE SOURCE
D2PAK−3 CASE 418AJ
MARKING DIAGRAM
&Z&3&K FDB2532
&Z &3 &K FDB2532
= Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
April, 2023 − Rev. 3
Publication Order Number: FDB2532−F085/D
FDB2532−F085
MOSFET MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS VGS ID
Drain to Source Voltage Gate to Source Voltage Drain Current
− Continuous (TC = 25°C, VGS = 10 V) − Continuous (TC = 100°C, VGS = 10 V) − Continuous (Tamb = 25°C, VGS = 10 V, RqJA = 43°C/W)
150
V
±20
V
79
A
56
8
A
ID
Drain Current
− Pulsed
EAS
Single Pulse Avalanche Energy (Note 1)
PD
Po...
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