N-Channel Enhancement Mode Power MOSFET
FQB200N04
N-Channel Enhancement Mode Power MOSFET
Description
The FQB200N04 uses advanced trench technology and design ...
Description
FQB200N04
N-Channel Enhancement Mode Power MOSFET
Description
The FQB200N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 40V,ID =200A RDS(ON) < 2.6mΩ @ VGS=10V
(Typ:2.0mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
40H20AD
NCE40H20AD
TO-263-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)...
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