100V N-Channel MOSFET
FQD15N10
100V N-Channel MOSFET
General Description
Product Summary
The FQP15N10 & FQPF15N10 uses trench MOSFET techno...
Description
FQD15N10
100V N-Channel MOSFET
General Description
Product Summary
The FQP15N10 & FQPF15N10 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V)
100% UIS Tested 100% Rg Tested
TO-220
Top View
TO-220F
100V 15A < 80mΩ < 75m Ω
D
G
FQP15N10
FQPF15N10
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS EAS
TC=25°C Power Dissipa...
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