FQD1N60

FQD1N60 FQU1N60 FQI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The FQD1N60 & FQU1N60 & FQI1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! 700V@150℃ 1.3A < 9Ω TO252 DPAK Bottom View D TO251A IPAK Bottom View TO251 Bottom View D G S G D S FQD1N60 FQI1N60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentB TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H Peak diode recovery dv/dt ID IDM IAR EAR EAS dv...