SL17N06D

N-Channel Power MOSFET General Features  VDS =60V,ID =17A RDS(ON) <75 mΩ @ VGS=10V RDS(ON) <90 mΩ @ VGS=4.5V  Improved dv/dt capability  High density cell design for ultra low Rdson  Good stability and uniformity with high EAS  Excellent package for good heat dissipation Applications  Power switching application  Hard switched and high frequency circuits  Motor drive SL17N06D Schematic diagram TO252 Pin Configuration Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (TC=25℃) Drain Current-Continuous (TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID(25℃) ID (100℃) IDM PD TJ,TSTG Limit 60 ±20 17 12 44 25 0.2 -50 To 150 Unit V V A A A W W/℃ ℃ www.slkormicro.com 1 Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC Electrical Characteristics (TC=...