S65R620

N-Channel Super Junction Power MOSFET S65R620 Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） VDS RDS(ON)MAX ID 650 V 360 mΩ 11 A TO-252 Schematic diagram Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） VDS Gate-Source Voltage (VDS=0V) VGS Continuous Drain Current at Tc=25°C ID (DC) Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) ID (DC) IDM (pluse) Maximum Power Dissipation(Tc=25℃) PD Derate above 25°C Single pulse avalanche energy (Note2) EAS Avalanche current(Note 1) IAR Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) EAR Value 650 ±30 11 7 33 121 0.97 280 5.5 0.5 Unit V V A A A ...