CS14N10A3

Silicon N-Channel Power MOSFET CS14N10 A3 ○R General Description： CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤150 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 100 V 14 A 43.1 W 113 mΩ Absolute（TC= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 IAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Avalanche Energy Avalanche Current Power Dissipation Derati...