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CS60N06AQ3 Dataheets PDF



Part Number CS60N06AQ3
Manufacturers Huajing Microelectronics
Logo Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Datasheet CS60N06AQ3 DatasheetCS60N06AQ3 Datasheet (PDF)

Silicon N-Channel Power Trench MOSFET CS60N06 AQ3 ○R General Description: CS60N06 AQ3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is PDFN5×6, which accords with the RoHS standard. Features: l Fast Switching l Low ON .

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