XN0NE92

Plhtetap:s//epvaisnitafsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmation.DisMcaionnttiennuaendce/ This product complies with the RoHS Directive (EU 2002/95/EC). Multi Chip Discrete XN0NE92 Silicon P-channel MOSFET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter ■ Features Two elements incorporated into one package Reduction of the mounting area and assembly cost by one half High-speed switching, low on resistance ■ Absolute Maximum Ratings Ta = 25°C FET SBD Parameter Symbol Rating Drain-source surrender voltage VDSS −12 Gate-source surrender voltage VGSS ±15 Drain current ID −1.2 Peak drain current IDP −3 Total power dissipation * PT 600 Channel temperature Tch 125 Storage temperature Tstg −55 to +125 Reverse voltage VR 20 Repetitive peak reverse voltage VRRM 25 Forward current (Average) IF(AV) 700 Non-repetitive peak IFSM 2 forward surge current Unit V V A A mW °C °C V V mA A Note) *: Measuri...