FPA105

Light Reflection Emitter / Sensor Array Optoelectronic Products 4-8 FPA103,FPA104 FPA105,FPA106 FPA107,FPA108 General Description The FPA103/104/105/106/107,108 consists of a GaAs infrared-emitting diode and a silicon npn phototransistor. The axial radiant intensity of the diode and the axial response o.f the phOtotransistor are perpendicular to the face of the device; therefore, the phototransistorresponds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the phototransistor. The diode used in theFPA 103/104/105/106/1071 108 is similar to Fairchild's FPE104 GaAs infraredemitting diode. I.t emits an intense, narrow band of radiation, peaking at approximately 900 nm (nonvisible) when forward biased. The phototransistor used in this device is sensitive to radiation over the wavelength range of 400 to 1100 nm. The FPA1061 1071 108 is electrically equivalent to the FPA 103/1 04/1 05 respectively, with the addition of an infrared filte...