GaAs Narrow Beam Infrared Emitter
Optoelectronic Products
4-23
FPE104
General Description The FPE 104 narrow beam infr...
GaAs Narrow Beam Infrared Emitter
Optoelectronic Products
4-23
FPE104
General Description The FPE 104 narrow beam infrared emitter is a highintensity source specifically intended for excitation of photosensors, especially photodiodes and
transistors, when the separation distances are measured from mm to several meters.
The FPE104 is the invisible infrared beam companion device to the FLV104, visible beam LED. Both devices have identical optics and, therefore, identical radiation patterns.
Very High Axial Intensity Narrow (4, Beamwldth Detectable At 30 Feet
Absolute Maximum Ratings
Maximum Temperature and Humidity
Storage Temperature
-55°C to +1oo°c
Junction Temperature
-55°C to +100°C
Pin Temperature (Soldering, 10 s) 260°C
Relative Humidity at 65°C
98%
Maximum Power Dissipation
=Total Dissipation at TA 25°C
Derate linearly from 25°C
200mW 2.6 mW/oC
Maximum Voltages and Currents
VR Reverse Voltage
3.0 V
IF Forward dc Current
1.0 A
Ipk Peak Forward Current,
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