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FPE104

Fairchild Semiconductor

GaAs Narrow Beam Infrared Emitter

GaAs Narrow Beam Infrared Emitter Optoelectronic Products 4-23 FPE104 General Description The FPE 104 narrow beam infr...


Fairchild Semiconductor

FPE104

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Description
GaAs Narrow Beam Infrared Emitter Optoelectronic Products 4-23 FPE104 General Description The FPE 104 narrow beam infrared emitter is a highintensity source specifically intended for excitation of photosensors, especially photodiodes and transistors, when the separation distances are measured from mm to several meters. The FPE104 is the invisible infrared beam companion device to the FLV104, visible beam LED. Both devices have identical optics and, therefore, identical radiation patterns. Very High Axial Intensity Narrow (4, Beamwldth Detectable At 30 Feet Absolute Maximum Ratings Maximum Temperature and Humidity Storage Temperature -55°C to +1oo°c Junction Temperature -55°C to +100°C Pin Temperature (Soldering, 10 s) 260°C Relative Humidity at 65°C 98% Maximum Power Dissipation =Total Dissipation at TA 25°C Derate linearly from 25°C 200mW 2.6 mW/oC Maximum Voltages and Currents VR Reverse Voltage 3.0 V IF Forward dc Current 1.0 A Ipk Peak Forward Current, ...




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