FCD855D

Optically-Coupled Darlington Isolator Optoelectronic Products 5-17 FCD850/C/D FCD855/C/D General Description The FCD850, FCD855 series of optoisolators have a silicon npn Planar Darlington phototransistor coupled to a GaAs diode. Each is mounted in a e-pin plastic dual in-line package. The FCD850/FCD850C has a minimum collector-emitter breakdown voltage of 30 V; the FCD855 I FCD855C has a minimum collectoremitter breakdown voltage of 55 V. Glassolated TII High Current Transfer Ratio 1500 V to 6000 V Minimum Isolation Input-to-Output 10" g Isolation Resistance Low Coupling Capacitance-Typically 1.0 pF Absolute Maximum Ratings Storage Temperature -55°C to +150°C Operating Temperature -55°C to + 100°C Pin Temperature (Soldering, 10 s) 260°C Total Package Power Dissipation =at TA 25°C, LED plus Detector 250mW Derate Linearly from 25°C 3.3 mW/oC Input Diode VR Reverse Voltage IF Forward Current Ipk Peak Forward Current at 1 jl.S pulse width, 300 pps Po Power Dissipatio...