CG2H40010

CG2H40010 10 W, DC - 6 GHz, RF Power GaN HEMT Cree’s CG2H40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CG2H40010 ideal for linear and compressed amplifier circuits. The transistor is available in both screwdown, flange and solder-down, pill packages. PPNa’sc:kCaGge2HT4yp0e0s1:04F4&01C6G62, H&4404001109P6 FEATURES Up to 8 GHz Operation 18 dB Small Signal Gain at 2.0 GHz 16 dB Small Signal Gain at 4.0 GHz 17 W typical PSAT 70 % Efficiency at PSAT 28 V Operation APPLICATIONS 2-Way Private Radio Broadband Amplifiers Cellular Infrastructure Test Instrumentation Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Rev 0.0 – May 2017 Subject ...