GTVA261701FA
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Description
The GTVA261701FA...
GTVA261701FA
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 – 2690 MHz
Description
The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility
transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced package with earless flange.
GTVA261701FA Package H-37265J-2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz
3GPP WCDMA signal, 10 dB PAR, 3.84 MHz bandwidth
32
80
28 24 Efficiency
60 40
20 20
16
Gain
0
12 -20
8 4 PAR @ 0.01% CCDF
-40 -60
0 -80g261701fa-gr1a 27 31 35 39 43 47 51
Average Output Power (dBm)
Features
GaN on SiC HEMT technology
Input Matched
Typical CW performance, 2690 MHz, 48 V, single side - Output power at P3dB = 170 W - Efficiency = 75% - Gain = 15 dB
Human Body Model, Class 1B (per ANSI/ESDA/ JEDEC JS-001)
Capable of handling 10:1 VSWR...