ELM54599CWA-N

Complementary MOSFET ■General Description ELM54599CWA-N ■Features http://www.elm-tech.com ELM54599CWA-N uses advanced trench N-channel technology to provide excellent Rds(on) and low gate charge. Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V) P-channel Vds=-40V, Id=-7.2A, Rds(on)=42mΩ(Vgs=-10V) Vds=-40V, Id=-6.2A, Rds(on)=60mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current(Tj=150°C) Pulsed drain current Power dissipation Junction and storage temperature range Ta=25°C Ta=70°C Tc=25°C Tc=70°C Symbol Vds Vgs Id Idm Pd Tj,Tstg Ta=25°C. Unless otherwise noted. N-ch (Max.) P-ch (Max.) Unit 40 -40 V ±20 ±20 V 8.0 6.0 -7.2 -6.2 A 25 -25 A 2.8 1.8 2.8 1.8 W -55 to 150 -55 to 150 °C ■Thermal Characteristics Parameter Maximum junction-to-ambient Maximum junction-to-ambient Steady-state Steady-state Symbol Rθja Rθja Device N-ch P-ch Typ....