Document
Single P-channel MOSFET
■General description
ELM595301SA-S ■Features
http://www.elm-tech.com
ELM595301SA-S uses advanced trench technology to
• Vds=-60V
provide excellent Rds(on), low gate charge and low gate
• Id=-35A
resistance.
• Rds(on) = 26mΩ (Vgs=-10V)
• Rds(on) = 36mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current
Power dissipation
Operating junction temperature Storage temperature range
Ta=25°C Ta=70°C
Tc=25°C Tc=70°C
Symbol Vds Vgs
Id
Idm
Pd
Tj Tstg
Ta=25°C. Unless otherwise noted.
Limit
Unit
-60 V
±20 V
-35 -20
A
-25 A
40 15
W
150 °C
-55 to 150
°C
■Thermal characteristics
Parameter Maximum junction-to-ambient
Symbol Rθja
Typ.
Max. 62.5
Unit °C/W
■Pin configuration
TO-252-3(TOP VIEW)
TAB
2 13
Pin No. 1 2 3
Pin name GATE DRAIN
SOURCE
■Circuit
D
G S
Rev.1.0 5- 1
Single P-channel MOSFET
■Electrical characteristics
ELM59.