High Power Infrared Emitting Diode
www.vishay.com
VSMY98545DS
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technolog...
Description
www.vishay.com
VSMY98545DS
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
DESCRIPTION
As part of the SurfLightTM portfolio, the VSMY98545DS is an infrared, 850 nm emitting diode based on surface emitter technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens. A 42 mil chip provides outstanding radiant intensity and allows DC operation of the device up to 1 A. Superior ESD characteristics are ensured by an integrated Zener diode.
FEATURES Package type: surface mount Double stack technology Package form: high power SMD with lens
Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24
Peak wavelength: λp = 850 nm Zener diode for ESD protection up to 2 kV High radiant power High radiant intensity Angle of half intensity: ϕ = ± 45° Designed for high drive currents: up to 1 A (DC) and up
to 5 A pulses
Low thermal resistance: RthJP = 10 K/W Floor lif...
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