APT40SM120B

APT40SM120B PRELIMINARY 1200V, 41A, 80mΩ Silicon Carbide N-Channel Power MOSFET DESCRIPTION Silicon carbide (SiC) power MOSFET product line from Microsemi increase your performance over silicon MOSFET and silicon IGBT solutions while lowering your total cost of ownership for high-voltage applications. PRELIMINARY Package APT40SM120B TO-247 D G S FEATURES / TYPICAL APPLICATIONS SiC MOSFET Features: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, Tj(max) = +175C Fast and reliable body diode Superior avalanche ruggedness SiC MOSFET Benefits: High efficiency to enable lighter/compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need of external Free Wheeling Diode Lower system cost of ownership Applications: PV inverter, converter and industrial motor...