8/2014
IFN410, IFN411, IFN412
N-Channel Matched Dual Silicon Junction Field-Effect Transistor
∙ Improved Replacements...
8/2014
IFN410, IFN411, IFN412
N-Channel Matched Dual Silicon Junction Field-Effect
Transistor
∙ Improved Replacements for the
U410, U411, & U412
∙ Low Noise Differential Amplifier ∙ Differential Amplifier ∙ Wide-Band Amplifier
Absolute maximum ratings at TA = 25oC
Reverse Gate Source & Gate Drain Voltage -40V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation 375 mW
Power Derating
3.0 mW/oC
Operating Temperature Range Storage Temperature Range
-55°C to +125°C -65oC to +150oC
At 25oC free air temperature
Static Electrical Characteristics
Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage Drain Saturation Current (pulsed)
IGSS VGS(OFF) VGS IDSS
Gate Current
IG
Dynamic Electrical Characteristics
Common-Source Forward Transconductance
gfs
Common-Source Output Conductance
gos
Common-Source Input Capacitance
Ciss
Common-Source Reverse Transfer Capacitance
Equivalent Short Circu...