MTI200WX75GD

Three phase full Bridge with Trench MOSFETs in DCB isolated high current package MTI200WX75GD VDSS = 75 V ID25 = 255 A RDSon typ. = 1.1 mW Part number MTI200WX75GD T1 G1 S1 T2 G2 S2 L1+ T3 G3 S3 L1 T4 G4 S4 L1- L2+ T5 G5 S5 L2 T6 G6 S6 L2- L3+ Surface Mount Device L3 L3- Features / Advantages: MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode package: - high level of integration - high current capability - aux. terminals for MOSFET gate control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer Space and weight savings High current capability Applications: AC drives in automobiles - electric power steering - starter generator in industrial vehicles - propulsion drives - fork lift drives Battery supplied equipment DC-DC converter Package: ISOPLUS-DIL® High level of integration RoHS compliant Terminals for ...