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IXXK100N60B3H1

IXYS

Diode

Advance Technical Information XPTTM 600V GenX3TM w/ Diode IXXK100N60B3H1 Extreme Light Punch Through IGBT for 10-30kH...


IXYS

IXXK100N60B3H1

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Advance Technical Information XPTTM 600V GenX3TM w/ Diode IXXK100N60B3H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC90 = V ≤CE(sat) tfi(typ) = 600V 100A 1.80V 150ns Symbol VCES VCGR VGES VGEM IC25 IILCR90MS IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC= 25°C ( Chip Capability ) Terminal Current Limit TC = 90°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load VGE= 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 600 600 ±20 ±30 V V V V 190 A 120 A 100 A 65 A 370 A 50 A 600 mJ ICM = 200 ≤@VCE VCES 10 A μs 695 -55 ... +150 150 -55 ... +150 300 260 1.13/10 10 W °C °C °C °C °C Nm/lb.in. g Symbol Test Conditions (TJ = 25°C, Unless Otherw...




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