Diode
Advance Technical Information
XPTTM 600V GenX3TM w/ Diode
IXXK100N60B3H1
Extreme Light Punch Through IGBT for 10-30kH...
Description
Advance Technical Information
XPTTM 600V GenX3TM w/ Diode
IXXK100N60B3H1
Extreme Light Punch Through IGBT for 10-30kHz Switching
VCES = IC90 = V ≤CE(sat) tfi(typ) =
600V 100A
1.80V 150ns
Symbol
VCES VCGR VGES VGEM
IC25 IILCR90MS IF110 ICM
IA EAS
SSOA
(RBSOA)
tsc (SCSOA)
PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient
TC= 25°C ( Chip Capability ) Terminal Current Limit TC = 90°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 2Ω Clamped Inductive Load
VGE= 15V, VCE = 360V, TJ = 150°C RG = 10Ω, Non Repetitive TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque
Maximum Ratings
600 600
±20 ±30
V V
V V
190 A 120 A 100 A
65 A
370 A
50 A 600 mJ
ICM = 200
≤@VCE VCES
10
A μs
695
-55 ... +150 150
-55 ... +150
300 260
1.13/10
10
W
°C °C °C
°C °C
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherw...
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