GaAs Detector Diode
Keysight Technologies HSCH-9161 HSCH-9162 GaAs Detector Diode
Data Sheet
Features
– Low junction capacitance – fc > ...
Description
Keysight Technologies HSCH-9161 HSCH-9162 GaAs Detector Diode
Data Sheet
Features
– Low junction capacitance – fc > 200 GHz – Lower temperature coefficient than silicon – Durable construction Typical 6 gram beam lead strength High power handling capability
02 | Keysight | HSCH-9161 HSCH-9162 GaAs Detector Diode – Data Sheet
Description
The HSCH-916x is a discrete, beam lead, GaAs diode fabricated using the modified barrier integrated diode (MBID) process.
Absolute Maximum Ratings
Symbol
Top Tstg PB
Parameters/conditions Operating temperature range Storage temperature range Burnout power
Typ. Min. Max. Units
–65 150
°C
–65 200
°C
20 dBm
DC Specifications/Physical Properties
(TA = 25 °C)
Part number
HSCH-9161 HSCH-9162
200
Junction capacitance (pF)
Typ.
0.035
0.035
Video resistance (kΩ)
Min. Max.
2.5 7.5
1.8 7.5
Voltage sensitivity strength (mV/μW)
Min. Typ.
0.5
0.5
Beam lead strength
Max. Unit 3 Grams 3 Grams
03 | Keysight | HSCH-9161 HSC...
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