SJMN190R65B

SJMN190R65B Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=700V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.19Ω (Max.)  Ultra low gate charge: Qg=20nC(Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN190R65B N190R65 TO-263 D GS TO-263 (D2-PAK) Marking Information SJMN 190R65 YWWZ Column 1: Manufacturer Column 2: Production Information e.g.) YWWN -. YWW: Data Code (year, week) -. Z: Management Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Diode dv/dt ruggedness (Note 3) VDSS VGSS Tc=25C ID Tc=100C IDM EAS IAR EAR PD dv/dt MOSFET dv/dt ruggedness (Note 4) dv/dt Junc...