SJMN190R65F

SJMN190R65F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: VDS=700V (@TJ=150°C) Low drain-source On resistance: RDS(on)=0.19Ω (Max.) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information Part Number Marking Package SJMN190R65F N190R65 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK ◎△ΔYYMMDDDD N190R65 SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD -. ◎△: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS Tc=25°C I...