SJMN05S60FD

SJMN05S60FD Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=650V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.7Ω (Typ.)  Ultra low gate charge: Qg=7nC(Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN05S60FD SJMN05S60 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK SJ◎M△NΔ0YY5MSMD6DD0D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD -. ◎△: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID ...