SJMN600R65D

SJMN6 0 0 R6 5 D Super Junction MOSFET N-Channel Super Junction MOSFET Fe at ur e s Drain-Source volt age: VDS=700V (@TJ=150°C) Low drain-source On resist ance: RDS(on)=0. 6Ω (Max. ) Ult ra low gat e charge: Qg=13. 5nC(Typ. ) RoHS compliant device 100%avalanche t est ed Ordering Information Part Number Marking Package SJMN6 0 0 R6 5 D SJMN6 0 0 R6 5 TO- 2 5 2 D G S TO-252 Marking Information SJMN 6 0 0 R6 5 YWWN Column 1, 2: Device Code Column 3: Production Information e. g. ) YWWN -. YWW: Date Code (year, week) -. N: Management Code Absolut e maximum rat ings (TC=25°C unless otherwise noted) Charact e r ist i c Symbol Drain-source volt age Gat e-source volt age Drain curr ent (DC) (Not e 1) Drain curr ent (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repet it ive avalanche cur rent (Note 1) Repet it ive avalanche energy (Not e 1) Power dissipat ion Diode dv/ dt ruggedness (Not e 3) VDSS VGSS Tc=25°C ID Tc=100°C IDM EAS IAR EAR P...