SJMN60R38F

SJMN60R38F Super Junction MOSFET N-Channel Super Junction MOSFET Features Drain-Source voltage: VDS=650V (@TJ=150C) Low drain-source On resistance: RDS(on)=0.34Ω (Typ.) Ultra low gate charge: Qg=20nC(Typ.) RoHS compliant device 100% avalanche tested Ordering Information Part Number Marking Package SJMN60R38F SJMN60R38 TO-220F-3L GDS TO-220F-3L Marking Information AAUUKK SJ◎M△NΔ6Y0YMRMD3DD8D SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD -. ◎△: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25C Tc=100C IDM EAS PD TJ Tstg * Limited only maximum junctio...