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SJMN60R38FM Dataheets PDF



Part Number SJMN60R38FM
Manufacturers KODENSHI KOREA
Logo KODENSHI KOREA
Description N-Channel Super Junction MOSFET
Datasheet SJMN60R38FM DatasheetSJMN60R38FM Datasheet (PDF)

SJMN60R38FM Super Junction MOSFET N-Channel Super Junction MOSFET Features • Drain-Source voltage: VDS=650V (@TJ=150°C) • Low drain-source On resistance: RDS(on)=0.34Ω (Typ.) • Ultra low gate charge: Qg=20nC(Typ.) • RoHS compliant device • 100% avalanche tested Ordering Information Part Number Marking Package SJMN60R38FM SJ60R38M TO-220FM-3L GDS TO-220FM-3L Marking Information AAUUKK ◎S△J6Y0ΔMRYD3MD8□DMD SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD -.

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SJMN60R38FM Super Junction MOSFET N-Channel Super Junction MOSFET Features • Drain-Source voltage: VDS=650V (@TJ=150°C) • Low drain-source On resistance: RDS(on)=0.34Ω (Typ.) • Ultra low gate charge: Qg=20nC(Typ.) • RoHS compliant device • 100% avalanche tested Ordering Information Part Number Marking Package SJMN60R38FM SJ60R38M TO-220FM-3L GDS TO-220FM-3L Marking Information AAUUKK ◎S△J6Y0ΔMRYD3MD8□DMD SDB20D45 Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD -. ◎△: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) -. □: Package Option Code Column 3: Device Code Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25°C Tc=100°C IDM EAS PD TJ Tstg *.


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