Document
SJMN60R38FM Super Junction MOSFET
N-Channel Super Junction MOSFET
Features
• Drain-Source voltage: VDS=650V (@TJ=150°C) • Low drain-source On resistance: RDS(on)=0.34Ω (Typ.) • Ultra low gate charge: Qg=20nC(Typ.) • RoHS compliant device • 100% avalanche tested
Ordering Information
Part Number
Marking
Package
SJMN60R38FM
SJ60R38M
TO-220FM-3L
GDS
TO-220FM-3L
Marking Information
AAUUKK ◎S△J6Y0ΔMRYD3MD8□DMD
SDB20D45
Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD
-. ◎△: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) -. □: Package Option Code Column 3: Device Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage Gate-source voltage
Drain current (DC) (Note 1)
Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Power dissipation Junction temperature Storage temperature range
VDSS
VGSS
ID
Tc=25°C Tc=100°C
IDM
EAS
PD
TJ
Tstg
*.