SJMN11S60I

SJMN11S60I N-channel Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=650V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.34Ω (Typ.)  Low input capacitance and gate charge  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN11S60I SJMN11S60 I-PAK GDS I-PAK Marking Information SJMN 11S60 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW : Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Avalanche current (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25C Tc=100C IDM EAS IAS PD TJ Tstg * Limited only maximum junction temperature Rating 600 30 11 7 33 294 3.5 83 150 -55~1...