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SJMN11A70I

N-Channel Super Junction MOSFET

Description

SJMN11A70I Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=750V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.33 (Typ.)  Ultra low gate charge: Qg=23nC (Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN11A70I SJMN11A70 I-PAK GDS I-PAK ...

KODENSHI KOREA

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SJMN11A70I N-Channel Super Junction MOSFET - KODENSHI KOREA

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