SJMN05A70D

SJMN05A70D Super Junction MOSFET N-Channel Super Junction MOSFET Features  Drain-Source voltage: VDS=750V (@TJ=150C)  Low drain-source On resistance: RDS(on)=0.81Ω (Typ.)  Ultra low gate charge: Qg=10nC (Typ.)  RoHS compliant device  100% avalanche tested Ordering Information Part Number Marking Package SJMN05A70D SJMN05A70 TO-252 D G S TO-252 Marking Information SJMN 05A70 YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW : Week Code Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) (Note 1) Drain current (Pulsed) (Note 1) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25C Tc=100C IDM EAS IAR EAR PD TJ Tstg * Limited only maximum junction temperatur...