Si4410DY

PD - 91853C Si4410DY l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive S S S G Description This N-channel HEXFET® Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. HEXFET® Power MOSFET AA 1 8D VDSS = 30V 2 7D 3 6D 4 5 D RDS(on) = 0.0135Ω Top View SO-8 Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C dv/dt EAS VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Pea...