MDS1652

MDS1652 – Single N-channel Trench MOSFET 30V MDS1652 Single N-Channel Trench MOSFET 30V, 17A, 6.5mΩ General Description The MDS1652 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Excellent low RDS(ON), low gate charge and operation for Battery Application. Features VDS = 30V ID = 17A @VGS = 10V RDS(ON) < 6.5mΩ @VGS = 10V < 9.5mΩ @VGS = 4.5V Applications Li-Ion Battery Application Portable Application Notebook PC Application 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absoloute Maximun Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation (1) Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Ta=25oC Ta=100oC Ta=25oC Ta=100oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case D G S Symbol ...