power transistors. MJE3055A Datasheet

MJE3055A transistors. Datasheet pdf. Equivalent

Part MJE3055A
Description Complementary Silicon power transistors
Feature SEMICONDUCTOR MJE3055A(NPN) MJE2955A(PNP) RRooHHSS Nell High Power Products Complementary Silicon.
Manufacture nELL
Datasheet
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MJE3055A
SEMICONDUCTOR
MJE3055A(NPN)
MJE2955A(PNP) RRooHHSS
Nell High Power Products
Complementary Silicon power transistors
(10A / 60V / 75W)
FEATURES
Designed for general-purpose switching
and amplifier applications.
DC current gain specified to 10A
High current gain-Band width product:
fT = 2 MHz (Min.) @ lC = 0.5 Adc
Excellent safe operating area
DESCRIPTION
The MJE3055A is a silicon epitaxial-base planar
NPN transistor in TO-220AB package.
lt is intended for use in general-purpose amplifier
and switding applications.
The complementary PNP type is MJE2955A.
12 3
TO-220AB
INTERNAL SCHEMATIC DIAGRAM
C (2)
(1)
B
(3)
E
MJE3055A(NPN)
C (2)
(1)
B
(3)
E
MJE2955A(PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VCBO
Collector to base voltage (IE = 0)
VCEO
Collector to emitter voltage (IB = 0)
VEBO
Emitter to base voltage
IC Collector current
IB Base current
Total power dissipation
PC
Derate above 25ºC
TC= 25°C
Tj Junction temperature
Tstg Storage temperature
*For PNP types voltage and current values are negative.
VALUE
70
60
5.0
10
6
75
0.6
150
-55 to 150
UNIT
V
A
W
W/ºC
ºC
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
Rth(j-c)
Maximum thermal resistance, junction to case
VALUE
1.70
UNIT
ºC/W
www.nellsemi.com
Page 1 of 3



MJE3055A
SEMICONDUCTOR
MJE3055A(NPN)
MJE2955A(PNP) RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
OFF CHARACTERISTICS
ICEX Collector cutoff current
VCE = 70V, VBE = 1.5V
VCE = 70V, VBE = 1.5V, TC = 150°C
ICEO
Collector cutoff current
ICBO
Collector cutoff current
IEBO
Emitter cutoff current
VCEO(SUS)* Collector to emitter sustaining voltage
V(BR)CBO
V(BR)EBO
Collector to base breakdown voltage
Emitter to base breakdown voltage
ON CHARACTERISTICS
VCE = 30V, lB = 0
VCB = 70V, lE = 0
VCB = 70V, lE = 0, TC = 150°C
VEBO = 5V, lC = 0
lC = 200mA, lB = 0
lE = 0, lC = 100mA
lC = 0, lE = 100mA
hFE Forward current transfer ratio (DC current gain)
VCE(sat)* Collector to emitter saturation voltage
VBE(on)* Base to emitter on voltage
DYNAMIC CHARACTERISTICS
lC = 4A, VCE = 4V
lC = 10A, VCE = 4V
lC = 4A, lB = 400mA
lC = 10A, lB = 3.3A
IC = 4A, VCE = 4V
Transition frequency (Current gain- Bandwidth
fT product )
lC = 0.5A, VCE = 10V, f = 500KHz
MIN MAX
1.0
5.0
0.7
mA
1.0
10
5.0
60
70 V
5
20 100
5
1.1
8.0
1.8
V
2.0 MHZ
ls/b*
Second breakdown collector current with base
forward baised
*Pulsed : Pulse duration = 300 µs, duty cycle 20%.
*For PNP types voltage and current values are negative.
Fig.1 Active region safe operating area
VCE = 40V, t = 1.0s
2.87
A
10
7.0
5.0 ms
1.0 ms
5.0
dc
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
5.0
TJ = 150°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 150°C
7.0 10
20 30
100 µs
50 60
There are two limitations on the power handling
ability of a transistor: average junction temperature
and second breakdown. Safe operating area curves
indicate lC-VCE limits of the transistor that must be
observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the
curves indicate.
The data of figure 1 is based on TJ(pk) =150°C. TC is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) 150°C. At high case temperatures, thermal
limitations wil l reduce the power that can be handled
to values less than the limitations imposed by second
breakdown.
Collector-emitter voltage, VCE (V)
www.nellsemi.com
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