SEMICONDUCTOR
MJE3055A(NPN) MJE2955A(PNP) RRooHHSS
Nell High Power Products
Complementary Silicon power transistors (...
SEMICONDUCTOR
MJE3055A(
NPN) MJE2955A(
PNP) RRooHHSS
Nell High Power Products
Complementary Silicon power
transistors (10A / 60V / 75W)
FEATURES
Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 2 MHz (Min.) @ lC = 0.5 Adc Excellent safe operating area
DESCRIPTION
The MJE3055A is a silicon epitaxial-base planar
NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary
PNP type is MJE2955A.
12 3
TO-220AB
INTERNAL SCHEMATIC DIAGRAM
C (2)
(1) B
(3) E
MJE3055A(
NPN)
C (2)
(1) B
(3) E
MJE2955A(
PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VCBO
Collector to base voltage (IE = 0)
VCEO
Collector to emitter voltage (IB = 0)
VEBO
Emitter to base voltage
IC Collector current
IB Base current
Total power dissipation PC
Derate above 25ºC
TC= 25°C
Tj Junction temperature Ts...
