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MJE3055A Datasheet, Equivalent, power transistors.Complementary Silicon power transistors Complementary Silicon power transistors |
| Part | MJE3055A |
|---|---|
| Description | Complementary Silicon power transistors |
| Feature | SEMICONDUCTOR
MJE3055A(NPN) MJE2955A(PN P) RRooHHSS
Nell High Power Products
Complementary Silicon power transistors (10A / 60V / 75W)
FEATURES
Designed f or general-purpose switching and amplif ier applications. DC current gain speci fied to 10A High current gain-Band widt h product: fT = 2 MHz (Min. ) @ lC = 0. 5 Adc Excellent safe operating area DESC RIPTION The MJE3055A is a silicon epita xial-base planar NPN transistor in TO-2 20AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP ty pe is MJE2955A. 12 3 TO-220AB INTERN AL SCHEMATIC D . |
| Manufacture | nELL |
| Datasheet |
| Part | MJE3055A |
|---|---|
| Description | Complementary Silicon power transistors |
| Feature | SEMICONDUCTOR
MJE3055A(NPN) MJE2955A(PN P) RRooHHSS
Nell High Power Products
Complementary Silicon power transistors (10A / 60V / 75W)
FEATURES
Designed f or general-purpose switching and amplif ier applications. DC current gain speci fied to 10A High current gain-Band widt h product: fT = 2 MHz (Min. ) @ lC = 0. 5 Adc Excellent safe operating area DESC RIPTION The MJE3055A is a silicon epita xial-base planar NPN transistor in TO-2 20AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP ty pe is MJE2955A. 12 3 TO-220AB INTERN AL SCHEMATIC D . |
| Manufacture | nELL |
| Datasheet |
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