CEC3933

CEC3933 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 39A, RDS(ON) = 11mΩ @VGS = 10V. RDS(ON) = 19mΩ @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D G S 56 78 Bottom View DFN3*3 43 21 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±20 Drain Current-Continuous@RθJc @RθJA Drain Current-Pulsed a@RθJc ID 39 ID 12.5 IDM 156 @RθJA IDM 50 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case b Thermal Resistance, Junction-to-Ambient b Symbol RθJc RθJA Limit 5 50 Units V V A A A A W C Units C/W C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2013.Sep http:...