N-Channel Enhancement Mode Field Effect Transistor
Description
CEC6072
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 54A, RDS(ON) = 9mΩ @VGS = 10V. RDS(ON) = 13mΩ @VGS = 5V.
Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.
D
G S
56 78 Bottom View
DFN3*3
43 21
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
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