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FIELD EFFECT POWER TRANSISTOR
IRF632,633
8.0 AMPERES 200, 150 VOLTS ROS(ON) ::: 0.6 0.
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching appl...
