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FIELD EFFECT POWER TRANSISTOR
IRF640,641 D84EN2,M2
18 AMPERES 200, 150 VOLTS
ROS(ON) =0.18 n
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power OMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switching ...
