SPM75GA601S7
Single IGBT Module
75A 600V
General Description
IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general SMPS and UPS.
Features
NPT Trench Technology
Low Conduction Loss
Fast & Soft inverse CAL Diodes
Positive Temperature Coefficient
Short Circuit Ruggedness
VCES=600V
IC=75A
Application
Switching Mode Power Supplies(SMPS)
High Power Inverter
UPS, Robotics
Electrical Welding Machine
preliminary data
Package : S7(SOT-227)
E
G
E
CC
G
E
E
Absolute Maximum Ratings (TC=25℃, unless otherwise noted.)
Symbol
Parameter
Conditions
VCES
collector-emitter voltage
VGE =0, Tj≥25°C
VGES
gate-emitter peak voltage
-
IC(AV)
DC collector current
TC=80°C
ICRM repetitive peak collector current
TC=80°C, tp=1ms
IF(AV)
DC forward current
-
IFRM
PD
tSC
Tj(max)
repetitive peak forw. current
total power dissipation
short circuit withstand time
maximum junction temperature
10 ms, sin 180°
TC=25°C
TC=80°C
VCC= 300V, VCES= 600V ,
VGE=15 V, Tj =125 °C
-
Tstg storage temperature
-
VISOL
Isolation test voltage
RMS, f=50Hz, t=1 minutes
Weight module
-
- terminal mounting torque (M4)
typical
Values
600
± 20
75
150
75
490
325
180
Units
V
V
A
A
A
A
W
W
10 μs
-40 ~ 150
-40 ~ 125
2,500
29
1.45
°C
°C
V
g
N.m
SPM75GA601S7_Ver_1.0_08.24.2015
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