DPDT Antenna Cross Switch
RF CMOS DPDT antenna cross switch with power handling
capability of up to 36.5 dBm
Suitable for multi-mode LTE and WCDMA multi antenna
Ultra-low insertion loss and harmonics generation
0.1 to 6.0 GHz coverage
No decoupling capacitors required if no DC applied on RF lines
General Purpose Input-Output (GPIO) Interface
Small form factor 1.15mm x 1.55mm
No power supply blocking required
High EMI robustness
RoHS and WEEE compliant package
The BGSX22G2A10 RF MOS switch is specifically designed for LTE and WCDMA triple antenna applications. This
DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports.
The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 2.3V to
3.4V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology,
external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The
BGSX22G2A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of
GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.
The device has a very small size of only 1.15 x 1.55mm2 and a maximum thickness of 0.6mm.
Please read the Important Notice and Warnings at the end of this document
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