~D~[F~lf
FIELD EFFECT POWER TRANSISTOR
IRF742,743
SAMPERES
400, 350 VOLTS
ROS(ON) =O.SO n
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device rugged-
ness and reliability.
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
N-CHANNEL
CASE STYLE TO-220AB
DIMENSIONS ARE IN INCHES ·AND (MILLIMETERSI
.404(10.26] . \ \~\~.~~II
I1+ .38019.651 ./I-1-' .
.19014.831
-.---.17014 321ri .055(1.391
1 .04811.221
.
t- -t _
.26516.731
.24516.221
•
CASE
t--+--+----ltr--;-.,I TERMEFPEERREANTCUERE
/ POINT
$ " t:~~~\~:~~l
~3.3 1
-----,
.22015.591
~51
.00110.0251
TERM.1
TERM.2
r.l1I1.on---.
.500(12.7IMIN.
TERM.3
.0331~.S41
.02710.691
. l~h r . 1 0 5•1. 029.56127.4111
I - -. 0 5 5 1 1 . 3 9 1 - /
f - -.04511.141
.21015.331
.19014.821
..0021511100..533sll
.10712.721
.OS712.211
maximum ratings (TC = 25° C) (unless otherwise specified)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS =1Mn
Continuous Drain Current @Tc = 25°C
@Tc = 100°C
Pulsed Drain Current(l)
Gate-Source Voltage
Total Power Dissipation @ TC =25°C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
VOSS
VOGR
10
10M
VGS
Po
TJ, TSTG
IRF742
400
400
8
5
32
±20
125
1.0
-55 to 150
thermal characteristics
Thermal ~esistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
R8JC
R8JA
h
(1) Repetitive Rating: Pulse width limited by max. junction temperature.
1.00
80
260
219
IRF743
350
350
8
5
32
±20
125
1.0
-55 to 150
1.00
80
260
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
°C
°CIW
°CIW
°C
