POWER TRANSISTOR. IRFD1Z2 Datasheet

IRFD1Z2 TRANSISTOR. Datasheet pdf. Equivalent

Part IRFD1Z2
Description FIELD EFFECT POWER TRANSISTOR
Feature ~D~·~~U FIELD EFFECT POVVER TRANSISTOR IRFD1Z2,1Z3 0.5 AMPERES 100, 60 VOL1S ROS{ON) = 2.4 il This.
Manufacture GE
Datasheet
Download IRFD1Z2 Datasheet

Semiconductor July 1998 IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 IRFD1Z2 Datasheet
~D~·~~U FIELD EFFECT POVVER TRANSISTOR IRFD1Z2,1Z3 0.5 AMPE IRFD1Z2 Datasheet
Recommendation Recommendation Datasheet IRFD1Z2 Datasheet




IRFD1Z2
~D~·~~U
FIELD EFFECT POVVER TRANSISTOR
IRFD1Z2,1Z3
0.5 AMPERES
100, 60 VOL1S
ROS{ON) = 2.4 il
This series of N-Channel Enhancement-mode Power
MOSFETs utilizes GE's advanced Power DMOS technology
to achieve low on-resistance with excellent device rugged-
ness and reliability.
This design has been optimized to give superior performance
in most switching applications including: switching power
supplies, inverters, converters and solenoid/relay drivers.
Also, the extended safe operating area with good linear
transfer characteristics makes it well suited for many linear
applications such as audio amplifiers and servo motors.
Features
• Polysilicon gate - Improved stability and reliability
• No secondary breakdown - Excellent ruggedness
• Ultra-fast switching - Independent of temperature
• Voltage controlled - High transconductance
• Low input capacitance - Reduced drive requirement
• Excellent thermal stability - Ease of paralleling
N-CHANNEL
CASE STYLE 4-PIN DIP
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
ODRAIN
SOURCE
GATE
~0.245 (6.22) ~ ,
I
----L-
II
-
~5~g:)-..J
IMAX.
-T W-.-(03.1.0240)
A I--X0.040(1.02)
0.15
13.81)
~I 0.300
I
10.~ ~0.022
0.100
.
0.15 r - ( 7 . 6 2 ) · ,
1(2.54)1
r--(3.81)
=maximum ratings (TA 25° C) (unless otherwise specified)
RATING
Drain-Source Voltage
Drain-Gate Voltage, RGS = 1Mil
Continuous Drain Current@TA = 25°C(1)
@ TA = 100°C(1)
Pulsed Drain Current(2)
Gate-Source Voltage
Total Power Dissipation @ TA = 25° C
Derate Above 25° C
Operating and Storage
Junction Temperature Range
SYMBOL
Voss
VOGR
10
10M
VGS
Po
TJ, TSTG
IRF01Z2
100
100
.40
.25
3.2
±20
1.0
9.6
-55 to 150
IRF01Z3
60
60
.40
.25
3.2
±20
1.0
9.6
-55 to 150
thermal characteristics
Thermal Resistance, Junction to Ambient
R8JA
105
105
Maximum Lead Temperature for Soldering
Purposes: %" from Case for 5 Seconds
h
300
300
(1) Oevlce mounted to vertical pc board in free air with drain lead soldered to 0.5 in. minimum copper run area.
(2) Repetitive Rating: Pulse width limited by max. junction temperature.
243
UNITS
Volts
Volts
A
A
A
Volts
Watts
W/oC
°C
°C/W
°C



IRFD1Z2
electrical characteristics (Tc = 25° C) (unless otherwise specified)
I CHARACTERISTIC
I ISYMBOL MIN
TYP
off characteristics
Drain-Source Breakdown Voltage
(VGS = OV, 10 = 250 f1A)
IRFD1Z2
IRFD1Z3
Zero Gate Voltage Drain Current
(VOS = Max Rating, VGS = OV, TA = 25°C)
(VOS = Max Rating, x 0.8, VGS = OV, TA = 125°C)
Gate-Source Leakage Current
(VGS = ±20V)
BVDSS
loss
IGSS
100
60
-
-
-
-
-
-
-
-
MAX
UNIT
-
-
250
1000
±500
Volts
f1A
nA
on characteristics*
Gate Threshold Voltage
(VOS = VGS, 10 = 25OIlA)
TA=25°C VGS(TH)
2.0
-
4.0 Volts
Drain Source On-State Voltage
(VGS = 10V)
10 = 0.25A
10 = 0.50A
10 = 0.25A, TA = 125°C
VOS(ON)
-
-
-
0.55 0.6 Volts
1.10 -
0.90 -
Static Drain-Source On-State Resistance
(VGS = 10V, 10 = 0.25A)
ROS(ON)
-
3.0 3.2 Ohms
Forward Transconductance
(VOS = 10V, 10 = 0.25A)
9fs -
0.2 - mhos
dynamic characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = OV
VOS = 25V
f = 1 MHz
Ciss
Coss
C rss
-
-
-
36 70 pF
20 30 pF
7 10 pF
switching characteristics*
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VOS = 30V
10 = 0.25A, VGS = 15V
RGEN = 500, RGS = 12.50
(RGS (EQUIV.) = 100)
td(on)
tr
td(off)
tf
-
-
-
-
6-
6-
12 -
7-
ns
ns
ns
ns
source-drain diode ratings and characteristics*
Continuous Source Current
Pulsed Source Current
IS - - 0.5 A
ISM - - 3.2 A
Diode Forward Voltage
(TA = 25°C, VGS = OV, IS = 0.5A)
Reverse Recovery Time
(Is = 0.5A, dls/dt = 100A/f1s, VOS = 40V Max., TA = 125°C)
VSO
trr
-
-
0.9 1.5 Volts
65 -
ns
'Pulse Test: Pulse width :s 300 {1s, duty cycle:S 2%
10
/'
)<..
"'" "'" "'"/'/'
"-1.0 /'
" '"/' '-
1'-
"-
'-
100l1S
"'" ""-~
'" "'" ""-0.1
'"OPERATION IN THIS AREA "-,.......... "-
1 ms
10ms
"-
'-IRF01Z3
- MAY BE LIMITED BY ROS(ON)
II- SINGLE PULSE
Ty 25°C
-i
"'- ""- IRF!'Z2
100ms
,""- DC
.01
10 20
50 100 200
500
Vos. DRAIN·SOURCE VOLTAGE (VOLTS)
MAXIMUM SAFE OPERATING AREA
2.4
_,
I I COND~TIONS:I I
,
2.2
= =ROSION) CONDITIONS: 10 15 A, VGS 10V
2.0 -
= =VGSITH) CONDITIONS: 10 250"A, VOS VGS
fil 1.8
N
:i! 1.6
::I;
a:
0
Z
1.4
~ 1.2
>0
: - -r - - r -
0 1.0
Z
---'"Z- 0.8
0
a1:1 06
.---V-
0.4
-.....V
.....V
r--
t-
0.2
VROSION) . /
./'
-VGSITH)
r--
-40 40 80 120 160
eTJ,JUNCTION TEMPERATURE C)
TYPICAL NORMALIZED ROS(ON) AND VaS(TH)VS, TEMP.
244





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)