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IRFF130 Dataheets PDF



Part Number IRFF130
Manufacturers GE
Logo GE
Description FIELD EFFECT POWER TRANSISTOR
Datasheet IRFF130 DatasheetIRFF130 Datasheet (PDF)

~D~[P~ IRFF130,131 FIELD EFFECT POWER TRANSISTOR 8.0 AMPERES 100, 60 VOLTS ROS(ON) = 0.18!l Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating .

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~D~[P~ IRFF130,131 FIELD EFFECT POWER TRANSISTOR 8.0 AMPERES 100, 60 VOLTS ROS(ON) = 0.18!l Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL A$ CASE STYLE TO-20SAF.


D82CQ1 IRFF130 IRFF131


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