~D~[P~U
FIELD EFFECT POVVER TRANSISTOR
IRFF220,221
3.5 AMPERES 200, 150 VOLTS
ROS(ON) =0.8 n
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switc...
