~D~[¥~lf
FIELD EFFECT POVVER TRANSISTOR
IRFF222,223
3 AMPERES 200, 150 VOLTS
ROS(ON) = 1.2 n
Preliminary
This series of N-Channel Enhancement-mode Power .MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most swit...
