~~D~[F~ IRFF310,311
FIELD EFFECT POWER TRANSISTOR
1.35 AMPERES 400, 350 VOLTS
ROS(ON) = 3.6 n
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most sw...
