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D88FQ1 Dataheets PDF



Part Number D88FQ1
Manufacturers GE
Logo GE
Description FIELD EFFECT POWER TRANSISTOR
Datasheet D88FQ1 DatasheetD88FQ1 Datasheet (PDF)

~D~[P~lf FIELD EFFECT POWER TRANSISTOR IRFP350,351 D88FQ2.Q1 15 AMPERES 400, 350 VOLTS ROS(ON) =0.3 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including:-switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area.

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~D~[P~lf FIELD EFFECT POWER TRANSISTOR IRFP350,351 D88FQ2.Q1 15 AMPERES 400, 350 VOLTS ROS(ON) =0.3 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in most switching applications including:-switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear transfer characteristics makes it well suited for many linear applications such as audio amplifiers and servo motors. Features • Polysilicon gate - Improved stability and reliability • No secondary breakdown - Excellent ruggedness • Ultra-fast switching - Independent of temperature • Voltage controlled - High transconductance • Low input capacitance - Reduced drive requirement • Excellent thermal stability - Ease of paralleling N-CHANNEL CASE STYLE TO-247 DIMENSIO.


D88FQ2 D88FQ1 IRFP352


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