mTMlJ~~~
Insulated Gate Bipolar Transistor
IGT6D21,E21
20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.145 0
This IGT'- T...
mTMlJ~~~
Insulated Gate Bipolar
Transistor
IGT6D21,E21
20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.145 0
This IGT'-
Transistor (Insulated Gate Bipolar
Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar
transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar
transistors. The device design and gate characteristics ofthe IGT'-
Transistor are also similar to power MOSFETS. An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on. The much lower on-state voltage drop also varies only moderately between 25°Cand 150°Cofferingextended power handling capability.
The IGT'-
Transistor is ideal for many high voltage switching applications operating at low frequencies and where low conduction losses are essential, such as; AC and DC motor control...