IGT6D21

mTMlJ~~~ Insulated Gate Bipolar Transistor IGT6D21,E21 20 AMPERES 400, 500 VOLTS EQUIV. ROS(ON) = 0.145 0 This IGT'- Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and the low on-state conduction losses similar to bipolar transistors. The device design and gate characteristics ofthe IGT'- Transistor are also similar to power MOSFETS. An important difference is the equivalent RDS(ON) drain resistance which is modulated to a low value (10 times lower) when the gate is turned on. The much lower on-state voltage drop also varies only moderately between 25°Cand 150°Cofferingextended power handling capability. The IGT'- Transistor is ideal for many high voltage switching applications operating at low frequencies and where low conduction losses are essential, such as; AC and DC motor control...