DARLINGTON TRANSISTORS. D40C7 Datasheet

D40C7 TRANSISTORS. Datasheet pdf. Equivalent

Part D40C7
Description NPN POWER DARLINGTON TRANSISTORS
Feature VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS D40C Series 30-50 VOLTS .5 AMP, 6.25 WATTS Designe.
Manufacture GE
Datasheet
Download D40C7 Datasheet

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D40C7
VERY HIGH GAIN
NPN POWER DARLINGTON
TRANSISTORS
D40C Series
30-50 VOLTS
.5 AMP, 6.25 WATTS
Designed for driver, regulator, touch switch, I.e. driver, audio
output, relay substitute, oscillator, servo-amplifier, and
capacitor multiplier applications.
Features:
• hFE Min. - 10,000 and 40,000
• 1.33 Watt power dissipation at TA = 25°
NPN
COLLECTOR
EMITTER
CASE STYLE TO-202
DIMENSIONS ARE IN INCHES AND (MILLIMETERS)
0.48(}-0.520
(12.192-13.208)
0.128-0.132
(3.251-3.353)
0.285-0.315
(7.237-8.001)
1.21 REF.
(30.734)
0.405-0.425
(10.287-10.795)
0.065-0.075
(1.651-1.905)
~ '~~"~
l
+l-'::-:0'0=-=95-0="05-~11_
(2.413-2.667)
'-0.095-0.105
. 0.026
~ (2.413-2.667)
(0.660)
0.095-0.106
(2.413-2.667)
~ 0.170-0.190
(4.318-4.826)
I 0.0'9-00. 26
(0.483-0.660)
-...j
=maximum ratings (TA 25° C) (unless otherwise specified)
RATING
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak(')
Base Current - Continuous
Total Power Dissipation @TA = 25°C
@TC=25°C
Operating and Storage
Junction Temperature Range
SYMBOL
VCEO
VCES
VESO
IC
ICM
Is
PD
TJ, TSTG
D40C1
30
30
13
.5
1.0
0.1
1.33
6.25
-55 to +150
thermal characteristics
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering
Purposes: W' from Case for 5 Seconds
=(1) Pulse Test: Pulse Width 300ms. Duty Cycle:S 2%.
R8JA
R8JC
TL
75
20
260
D40C4
40
40
13
.5
1.0
0.1
1.33
6.25
-55 to +150
75
20
260
D40C7
50
50
13
.5
1.0
0.1
1.33
6.25
-55 to +150
UNITS
Volts
Volts
Volts
A
A
Watts
°C
75 °C/W
20 °C/W
260 °C
371



D40C7
=electrical characteristics (Tc 25° C) (unless otherwise specified)
I I ICHARACTERISTIC
SYMBOL MIN
TYP
off characteristics(1)
Collector-Emitter Voltage
(Ic =10mA)
Collector Cut-off Current
(VCE =Rated VCES)
Emitter Cutoff Current
(VES =13V)
D40C1
D40C4
D40C7
(TC =2S°C)
(TC =1S0°C)
VCEO
ICES
Icso
IESO
30
40
SO
-
-
-
-
-
-
-
-
-
MAX
-
-
-
O.S
20
0.1
UNIT
Volts
p,A
pA
second breakdown
I Second Breakdown with Base Forward Biased
on characteristics
DC Current Gain
(IC =200mA, VCE =SV)
FBSOA
SEE FIGURE 2
hFE
10K
-
60K
Collector-Emitter Saturation Voltage
(Ic =SOOmA, Is =O.SmA)
Base-Emitter Saturation Voltage
(IC =SOOmA, Is =O.SmA)
dynamic characteristics
Collector Capacitance
(VCE =10V, f =1MHz)
Current Gain - Bandwidth Product
(Ic =20mA, VCE =5V)
switching characteristics
Resistive Load
. Delay Time + Rise Time
Storage Time
Ic =1A, IS1 =IS2 =1mA
VCC =30V, tp =2S p,sec
Fal) Time
(1) Pulse Test: PW:5 300ms Duty Cycle:5 2%.
lOOK
BOK
60K
40K
V
20K
10K
8K
6K
./
....... 4K
.s:: 2K
IK
800
600
/
400
-.- TJ '150'C
--H
vi--' V TJ " 25' C
II
- ""-
"-..... 1'\
~
J.-+-
........
V T • -55'C
J j II
PULSEO MEASUREMENT,
PULSE WIDTH· 2 MILLISEC
DUTY CYCLE ~ 2 %
VCE =5 VOLTS
t-
t-
D40CI, 4, AND 7
t-
200
100
I
d2 4 6 8 10 20 40 6°8 oo 200 4°~o<¥°9000
IC-COLLECTOR CURRENT -MILLIAMPERES
FIG 1. TYPICAL hFE vs.IC
VCE(sat)
VSE(Sat)
CCSO
fT
td + tr
ts
tf
- - 1.S V
- - 2.0 Volts
- - 220 pF
- 7S - MHz
- 100 -
- 3S0 -
- 800 -
ns
VCE -COLLECTOR-TO-EMITTER VOLTAGE -VOLTS
FIG. 2 SAFE REGION OF OPERATION
372





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