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BU103AD

Jingdao

Bipolar Junction Transistor

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU103AD Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1....


Jingdao

BU103AD

File Download Download BU103AD Datasheet


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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU103AD Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1.APPLICATION Fluorescent Lamp、Electronic Ballast、 and Switch-mode power supplies 2.FEATURES High voltage capability Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3.PACKAGE TO-92 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 VD 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL VCBO VCEO VEBO IC Ptot Tj Tstg 650 400 9 2 0.8 20 150 -55~150 V V V A W ℃ ℃ VALUE TEST CONDITION UNIT MIN TYP MAX Collector-Base Voltage Collector-Emittor Voltage Emitt...




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